Nano-cones Formed on a Surface of Semiconductors by Laser Radiation: Technology, Model and Properties
نویسندگان
چکیده
The new laser method for nanostructures formation on a surface of semiconductors Si, Ge, GaAs and SiGe, CdZnTe solid solutions is proposed. For the first time was shown the possibility of graded band gap structure formation in elementary semiconductors. Thermogradient effect has a main role in initial stage of nano-cones and graded band gap structure formation by laser radiation in semiconductors.
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